AlGaInN-based lasers with dovetailed ridge

Details AlGaInN-based lasers with dovetailed ridge AlGaInN-based lasers with dovetailed ridge

2007-07-18

2009-06-02

Nguyen, Dung T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010, C372S066000

Reexamination Certificate

active

07542497

ABSTRACT:
A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE, and wherein said laser waveguide has inwardly angled sidewalls.

REFERENCES:
patent: 5615224 (1997-03-01), Cohen
patent: 6803605 (2004-10-01), Lindstrom et al.
Notification of Transmittal of the International Search Report and the Written Opinion of the International Searching Authority for International App. No. PCT/US2007/016235, mailed Oct. 22, 2008.

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