Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2005-07-12
2005-07-12
Baumeister, B. William (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C438S172000, C438S312000, C438S313000, C438S317000, C438S309000, C438S322000, C257S012000, C257S014000, C257S015000, C257S047000, C257S183000, C257S183100, C257S198000
Reexamination Certificate
active
06917061
ABSTRACT:
A heterojunction bipolar transistor is provided that has a reduced turn-on voltage threshold. A base spacer layer is provided and alternately an emitter layer is provided that has a lowered energy gap. The lowered energy gap of the base spacer or the emitter spacer allow the heterojunction bipolar transistor to realize a lower turn-on voltage threshold. The thickness of the emitter layer if utilized is kept to a minimum to reduce the associated space charge recombination current in the heterojunction bipolar transistor.
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Han Byung-Kwon
Pan Noren
Baumeister B. William
Burns, Esq. David R.
Lahive & Cockfield LLP
Laurentano, Esq. Anthony A.
Lee, Jr. Granvill D.
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