AlGaAs native oxide

Details AlGaAs native oxide AlGaAs native oxide

1991-06-24

1993-11-16

Fourson, George

Fishing, trapping, and vermin destroying

437919, 437983, 437 42, H01L 2131

Patent

active

052623602

ABSTRACT:
A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375.degree. C. to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.

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