AlGaAs/GaAs thyristor

Details AlGaAs/GaAs thyristor AlGaAs/GaAs thyristor

1993-03-01

1994-03-01

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257109, 257118, 257132, 257436, 257439, 257459, 257466, 257609, H01L 2714, H01L 3100, H01L 2974

Patent

active

052910415

ABSTRACT:
The present invention comprises a semi-insulating layer of GaAs with p+ and layers of aluminum gallium arsenide AlGaAs grown on one side of the semi-insulating GaAs and with p and n+ layers of AlGaAs grown on the other side of the semi-insulating GaAs. Ohmic contacts are grown on both sides of the thyristor as well as low temperature GaAs to provide for surface passivity.

REFERENCES:
patent: 4027322 (1977-05-01), Heinecke
patent: 4829357 (1989-05-01), Kasahara
patent: 4864168 (1989-09-01), Kasahara et al.
patent: 4952028 (1990-08-01), Tashira
patent: 5204871 (1993-04-01), Larkins

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