Coherent light generators – Particular active media – Semiconductor
Patent
1980-12-23
1983-05-31
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
357 17, 357 61, H01S 319
Patent
active
043864295
ABSTRACT:
Disclosed are double heterostructure junction lasers and incoherent LEDs in which the active region comprising Al.sub.z Ga.sub.1-z As.sub.1-y Sb.sub.y 0.001.ltoreq.y.ltoreq.0.02 and in which the cladding layers comprise Al.sub.x Ga.sub.1-x As, (x-z).gtoreq.0.20. Long lifetime lasers operating at wavelengths in the vicinity of 0.87-0.92 .mu.m are realized. Visible wavelength lasers and LEDs are also discussed.
REFERENCES:
Olsen et al., "Calculated Stresses in Multilayered Heteroepitaxial Structures", JAP, vol. 48, No. 6, Jun. 1977, pp. 2543-2547.
Casey et al., "Binary and Quaternary Systems", Heterostructure Lasers, Part B, 1978, pp. 38-41 and 56-57.
Nahory et al., "Continuous Operation of Lo-.mu.m-Wavelength GaAs.sub.1-x Sb.sub.x /Al.sub.y Ga.sub.1-y As.sub.1-x Sb.sub.x Double Heterostructure Injection Lasers at Room Temperature", APL , vol. 28, No. 1, Jan. 1, 1976, pp. 19-21.
Dierschke, "High-Efficiency GaAsSb/GaAlAsSb Double-Heterostructure Hemispherical Infrared Emitting Diodes", IEEE Transactions on Electron Devices, vol. ED-26, No. 8, Aug. 1979, pp. 1211-1214.
Rogulin et al., "Near-Infrared Spontaneous Radiation Sources Based on GaSb.sub.x As.sub.1-x Solid Solution", Sov. Phys. Semicond., vol. 8, No. 10, Apr. 1975, pp. 1332-1333.
Sugiyama et al., "GaAsSb-AlGaAsSb Double Heterojunction Lasers", Japan Journal of Applied Physics, 1972, pp. 1057-1058.
Antypas et al., "Liquid Epitaxial Growth of GaAsSb and Its Use as a High-Efficiency, Long-Wavelength Threshold Photoemitter", JAP, vol. 41, No. 5, Apr. 1970, pp. 2165-2171.
Chaminant et al., "Growth and Properties of GaAsSb/GaAlAsSb Double Heterostructure Lasers", Solid-State and Electron Devices, vol. 3, No. 6, Nov. 1979.
Bell Telephone Laboratories Incorporated
Davie James W.
Urbano Michael J.
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