(AlGa)InPN high brightness white or desired color LED's

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Reexamination Certificate

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C257S094000, C257S103000

Reexamination Certificate

active

06897489

ABSTRACT:
Group III-V compound semiconductor high brightness white or desire color light emitting diodes (LEDs) are disclosed. One of embodiments of the LEDs of the present invention comprises a first active layer, a second active layer, and a transition active layer sandwiched between the first and the second active layers, and is flip chip bonded on an electrically conductive submount for faster heat dissipation. Material systems for active layers of the LEDs of the present invention comprise (Al.sub.xGa.sub.1-x).sub.yIn.sub.1-yP.sub.z N.sub. 1-z. With combinations of different values of “x”, “y”, and “z”, the active layers and the transition active layer emit lights of different wavelengths. Appropriately adjusting wavelengths and intensities of emitted lights provides high brightness white or desire color.

REFERENCES:
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patent: 6163038 (2000-12-01), Chen et al.
patent: 6649943 (2003-11-01), Shibata et al.
patent: 20030164507 (2003-09-01), Edmond et al.
patent: 20030173573 (2003-09-01), Udagawa
patent: 20040026705 (2004-02-01), Kato et al.

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