Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2005-05-24
2005-05-24
Ngô, Ngân V. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S094000, C257S103000
Reexamination Certificate
active
06897489
ABSTRACT:
Group III-V compound semiconductor high brightness white or desire color light emitting diodes (LEDs) are disclosed. One of embodiments of the LEDs of the present invention comprises a first active layer, a second active layer, and a transition active layer sandwiched between the first and the second active layers, and is flip chip bonded on an electrically conductive submount for faster heat dissipation. Material systems for active layers of the LEDs of the present invention comprise (Al.sub.xGa.sub.1-x).sub.yIn.sub.1-yP.sub.z N.sub. 1-z. With combinations of different values of “x”, “y”, and “z”, the active layers and the transition active layer emit lights of different wavelengths. Appropriately adjusting wavelengths and intensities of emitted lights provides high brightness white or desire color.
REFERENCES:
patent: 5684309 (1997-11-01), McIntosh et al.
patent: 6163038 (2000-12-01), Chen et al.
patent: 6649943 (2003-11-01), Shibata et al.
patent: 20030164507 (2003-09-01), Edmond et al.
patent: 20030173573 (2003-09-01), Udagawa
patent: 20040026705 (2004-02-01), Kato et al.
Peng Gang Grant
Peng Hui
LandOfFree
(AlGa)InPN high brightness white or desired color LED's does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with (AlGa)InPN high brightness white or desired color LED's, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and (AlGa)InPN high brightness white or desired color LED's will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3373942