ALD ZnO seed layer for deposition of ZnO nanostructures on a...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S104000, C257SE51016, C257SE51029

Reexamination Certificate

active

10976594

ABSTRACT:
Zinc-oxide nanostructures are grown without using a metal catalyst by forming a seed layer of polycrystalline zinc oxide on a surface of a substrate. The seed layer can be formed by an atomic layer deposition technique. Growth of at least one zinc-oxide nanostructure is induced on the seed layer. The seed layer can alternatively be formed by using a spin-on technique, such as a metal organic deposition technique, a spray pyrolisis technique, an RF sputtering technique or by oxidation of the seed layer.

REFERENCES:
patent: 6979489 (2005-12-01), Lu et al.
patent: 2003/0213428 (2003-11-01), Lu et al.
patent: 2005/0009224 (2005-01-01), Yang et al.
patent: 2005/0223969 (2005-10-01), Chen et al.
patent: 2006/0189018 (2006-08-01), Yi et al.
Article entitled, “Vapor-Liquid-Solid Mechanism of Single Crystal Growth” by R.E. Wagner et al., published in Applied Physics Letters, Mar. 1, 1964, vol. 4, No. 5, pp. 89-90.
Article entitled, “Nanoscale Science and Technology” Building a Big Future from Small Things, by C. M. Kieber, published in MRS Bulleting/Jul. 2003, pp. 486-491.
Article entitled, “Controlled Growth of ZnO Nanowires and Their Optical Properties”, by P. Yang et al., published in Adv. Funct. Mater. 2002, 12, No. 5, May, pp. 323-331.
Article entitled, “Room-Temperature Ultraviolet Nanowire Nanolasers”, by M. H. Huang et al., published in Science Mag., vol. 292, Jun. 8, 2001, pp. 1897-1899.

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