ALD processing techniques for forming non-volatile...

Details ALD processing techniques for forming non-volatile... ALD processing techniques for forming non-volatile...

2011-08-30

2011-08-30

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S257000, C438S785000, C257SE21680

Reexamination Certificate

active

08008096

ABSTRACT:
ALD processing techniques for forming non-volatile resistive-switching memories are described. In one embodiment, a method includes forming a first electrode on a substrate, maintaining a pedestal temperature for an atomic layer deposition (ALD) process of less than 100° Celsius, forming at least one metal oxide layer over the first electrode, wherein the forming the at least one metal oxide layer is performed using the ALD process using a purge duration of less than 20 seconds, and forming a second electrode over the at least one metal oxide layer.

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