AlAS Zn-stop diffusion layer in AlGaAs laser diodes

Details AlAS Zn-stop diffusion layer in AlGaAs laser diodes AlAS Zn-stop diffusion layer in AlGaAs laser diodes

1992-02-18

1993-05-18

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

052127052

ABSTRACT:
An AlGaAs-based semiconductor laser diode is disclosed which has a Zn-stop diffusion layer of p-type conductivity deposited on the active layer, having an Al content greater than 85%.

REFERENCES:
patent: 4426703 (1984-01-01), Kuroda et al.
patent: 4731789 (1988-03-01), Thornton
patent: 5166945 (1992-11-01), Arimoto
F. T. J. Smith, "Zinc diffusion in AlGaAs", Proceedings of the 13th State-of-the-Art Program on Compound Semiconductors, Electrochemical Society, Pennington, 1991, pp. 274-280.
Y-R Yuan, E. Kazuo, G. A. Vawter, and J. L. Merz, J. Appl. Phys., vol. 54, 6044, 1983.
V. Quintana, J. J. Clemencon, and A. K. Chin, J. Appl. Phys., vol. 63, 2454, 1988.

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