Coherent light generators – Particular active media – Semiconductor
Patent
1992-02-18
1993-05-18
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 45, H01S 319
Patent
active
052127052
ABSTRACT:
An AlGaAs-based semiconductor laser diode is disclosed which has a Zn-stop diffusion layer of p-type conductivity deposited on the active layer, having an Al content greater than 85%.
REFERENCES:
patent: 4426703 (1984-01-01), Kuroda et al.
patent: 4731789 (1988-03-01), Thornton
patent: 5166945 (1992-11-01), Arimoto
F. T. J. Smith, "Zinc diffusion in AlGaAs", Proceedings of the 13th State-of-the-Art Program on Compound Semiconductors, Electrochemical Society, Pennington, 1991, pp. 274-280.
Y-R Yuan, E. Kazuo, G. A. Vawter, and J. L. Merz, J. Appl. Phys., vol. 54, 6044, 1983.
V. Quintana, J. J. Clemencon, and A. K. Chin, J. Appl. Phys., vol. 63, 2454, 1988.
Kahen Keith B.
Smith Frank T. J.
Davie James W.
Eastman Kodak Company
Owens Raymond L.
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