Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Patent
1998-09-14
2000-06-27
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
257506, 257524, 438 34, 438 46, 438 47, 438778, 438779, H01L 3300
Patent
active
060810009
DESCRIPTION:
BRIEF SUMMARY
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention is directed to an optoelectronic semiconductor device, whereby at least one functional optoelectronic semiconductor structure is allocated to a first principal surface of an electrically conductive III-V semiconductor substrate, and whereby the functional optoelectronic semiconductor is electrically insulated from a second principal surface of the III-V semiconductor substrate lying opposite the first principal surface.
2. Description of the Related Art
Such a semiconductor device is known, for example, from the publication by Franklin S. Harris, Jr., Applied Optics, Vol. 27, No. 15, page 3141. This discloses a photodiode array, whereby a plurality of AlGaAs/GaAs photodiodes are monolithically integrated on what is referred to as a semi-insulating GaAs substrate.
Further, the publication by G. Muller, M. Honsberg, Journal of Optical Communications 6 (1985), June No. 2, Berlin, Germany, page 42, discloses an MCRW (Metal Clad Ridge Waveguide) laser structure that is applied on a semi-insulating GaAs substrate. Here, the semi-insulating GaAs substrate serves the purpose of electrically insulating a plurality of components that are monolithically integrated on the substrate from one another.
The insulating effect of semi-insulating substrates is achieved via the incorporation of deep imperfection levels (for example, Cr or, respectively, C given GaAs substrates and Fe given InP substrates). However, the incorporation of such dopants into a III-V crystal lattice involves a number of difficulties both in the manufacture as well as in the manipulation. Thus, for example, it is extremely difficult to homogeneously incorporate these dopants into the III-V crystal lattice, as a result whereof the realization of a uniform insulating effect over the entire area of a semi-insulating substrate is made more difficult. Compared, for example, to the manufacture of semiconductor components on conductive GaAs substrates, the production yield in the production yield in the manufacture of semiconductor components with semi-insulating substrates is therefore very low.
A further problem of semi-insulating semiconductor substrates is comprised therein that their insulating effect already drastically decreases given moderate temperature elevation since free charge carriers are generated in the semiconductor crystal.
SUMMARY OF THE INVENTION
The present invention is based on the object of developing an optoelectronic semiconductor device of the species initially cited wherein the electrical insulation properties between the functional semiconductor structure and the second principal surface of the of the III-V semiconductor substrate are subject to optimally few fluctuations, and whereby the corresponding electrical insulating effect is also adequately high at temperature elevations usually occurring during the operation of optoelectronic semiconductor components such as, for example, particularly arise given power semiconductor as well as in motor vehicles (ambient temperature fluctuations).
This and other objects and advantages are achieved by an optoelectronic semiconductor device. having a III-V semiconductor substrate; at least one functional optoelectronic semiconductor structure allocated to a first principal surface of the III-V semiconductor substrate; the functional semiconductor structure being electrically insulated from a second principal surface the III-V semiconductor substrate lying opposite the first principal surface; the III-V semiconductor substrate being electrically conductive; and at least one electrically insulating oxide layer being provided between the functional optoelectronic semiconductor structure and the III-V semiconductor substrate. Advantageous developments and preferred embodiments of the inventive semiconductor device are provided when the III-V semiconductor substrate exhibits a charge carrier concentration of greater than 1*10.sup.15 cm.sup.-3 at room temperature. In a more specific embodiment, the electrically cond
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Baumeister Bradley W.
Jackson, Jr. Jerome
Siemens Aktiengesellschaft
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