Al-Ni-Cr conductive layer for semiconductor devices

Details Al-Ni-Cr conductive layer for semiconductor devices Al-Ni-Cr conductive layer for semiconductor devices

1994-12-05

1997-04-22

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257753, 257767, 257768, 257771, 257915, H01L 23532

Patent

active

056231660

ABSTRACT:
An aluminum-nickel-chromium (Al-Ni-Cr) layer used as an interconnect within a semiconductor device is disclosed. The Al-Ni-Cr layer has about 0.1-0.5 weight percent nickel and about 0.02-0.1 weight percent chromium. Usually, the nickel or chromium concentrations are no greater than 0.5 weight percent. The layer is resistant to electromigration and corrosion. The low nickel and chromium concentrations allow the layer to be deposited and patterned similar to most aluminum-based layers.

REFERENCES:
patent: 3983022 (1976-09-01), Auyang et al.
patent: 4561009 (1985-12-01), Yonezawa et al.
patent: 4884123 (1989-11-01), Dixit et al.
patent: 5088002 (1992-02-01), Ogawa
patent: 5141897 (1992-08-01), Manocha et al.
Dijkstra, et al., "Optimization of Anti-Refection Layers for Deep UV Lithography," SPIE, vol. 1027, Mar., 1993, pp. 275-286.
Ratner, et al.; "Interactions of Thin Al Films with Ni-Cr Alloy and Bilayer Films Deposited on Si"; Physica Status Solidi (a); pp. 61-69 (1986).
Onuki, et al.; "High-Reliability Interconnections for ULSI Using Al-Si-Pd-Nb/Mo Layered Films;" IEEE Transactions on Electron Devices; vol. 39, No. 6; pp. 1322-1326 (Jun. 1992).
D'Heurle; "The Effect of Copper Additions on Electromigration in Aluminum Thin Films;" Metallurgical Transactions; vol. 2; pp. 683-689 (1971).
Gangulee, et al.; "Effect of Alloy Additions on Electromigration Failures in Thin Aluminum Films;" Applied Phys. Let.; vol. 19, No. 3; pp. 76-77 (1971).
Wolf; Silicon Processing for the VLSI Era; vol. II; pp. 110, 111, 132, 133 (1990).
Wolf, et al.; Silicon Processing for the VLSI Era; vol. I; pp. 332-334 (1986).
Ogawa, et al; "A Novel Al-Sc (Scandium) Alloy for Future LSI Interconnection;" IEDM; pp. 277-280 (1991).

Affiliated with

Also associated with

Rating

Al-Ni-Cr conductive layer for semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Al-Ni-Cr conductive layer for semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Al-Ni-Cr conductive layer for semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-343529