Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1994-12-05
1997-04-22
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257753, 257767, 257768, 257771, 257915, H01L 23532
Patent
active
056231660
ABSTRACT:
An aluminum-nickel-chromium (Al-Ni-Cr) layer used as an interconnect within a semiconductor device is disclosed. The Al-Ni-Cr layer has about 0.1-0.5 weight percent nickel and about 0.02-0.1 weight percent chromium. Usually, the nickel or chromium concentrations are no greater than 0.5 weight percent. The layer is resistant to electromigration and corrosion. The low nickel and chromium concentrations allow the layer to be deposited and patterned similar to most aluminum-based layers.
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Kawasaki Hisao
Lee Chii-Chang
Olowolafe Johnson O.
Guay John
Jackson Jerome
Meyer George R.
Motorola Inc.
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