Air gaps copper interconnect structure

Details Air gaps copper interconnect structure Air gaps copper interconnect structure

2005-01-11

2005-01-11

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S276000, C257S506000, C257S758000, C257S750000, C438S618000, C438S619000, C438S622000, C438S624000, C438S627000, C438S637000

Reexamination Certificate

active

06841844

ABSTRACT:
An inter-level insulator structure is provided having an effective insulator dielectric constant approaching 1. An embodiment of the inter-level insulator comprises a first metal layer comprising a first plurality of metal lines; a second metal layer comprising a second plurality of metal lines, and at least one via connected to the first metal layer; and an air gap interposed between the first metal layer and the second metal layer. In one embodiment, the air gap is also present between metal lines on either metal layer, such that air gaps act as intra-level as well as inter-level insulators. A method is also provided to deposit and pattern a sacrificial polymer, and form metal layers. The sacrificial polymer is capable of being decomposed to become air gaps during annealing.

REFERENCES:
patent: 6057224 (2000-05-01), Bothra et al.
patent: 6204165 (2001-03-01), Ghoshal
patent: 6413852 (2002-07-01), Grill et al.
patent: 6423629 (2002-07-01), Ahn et al.
patent: 6596624 (2003-07-01), Romankiw
patent: 20020145201 (2002-10-01), Armbrust et al.
patent: 20020160563 (2002-10-01), Ghoshal

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