Air gap integration

Details Air gap integration Air gap integration

2006-02-07

2006-02-07

Parekh, Nitin (Department: 2811)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having air-gap dielectric

C438S619000, C438S629000, C438S618000, C438S637000, C438S627000, C438S634000, C257S522000, C257S758000, C257S774000

Reexamination Certificate

active

06995073

ABSTRACT:
Method and structure for integrating conductive and dielectric materials in a microelectronic structure having air gaps are disclosed. Certain embodiments of the invention comprise isolating dielectric layers from conductive layers using an etch stop layer to facilitate controlled removal of portions of the dielectric layers and formation of air gaps or voids. Capping and peripheral structural layers may be incorporated to increase the structural integrity of the integration subsequent to removal of sacrificial material.

REFERENCES:
patent: 6413852 (2002-07-01), Grill et al.
patent: 6689680 (2004-02-01), Greer
patent: 6696222 (2004-02-01), Hsue et al.
patent: 6713835 (2004-03-01), Horak et al.
patent: 2003/0127740 (2003-07-01), Hsu et al.

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