Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-11-21
2010-10-19
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S002000, C257S003000, C257S005000, C257SE21409
Reexamination Certificate
active
07816661
ABSTRACT:
A memory device includes, a first electrode element, generally planar in form, having an inner contact surface. Then there is a cylindrical cap layer, spaced from the first electrode element, and a phase change element having contact surfaces in contact with the first electrode contact surface and the cap layer, in which the lateral dimension of the phase change element is less than that of the first electrode element and the cylindrical cap layer. A second electrode element extends through the cap layer to make contact with the phase change element. Side walls aligned with the cap layer, composed of dielectric fill material, extend between the first electrode elements and the cap layer, such that the phase change element, the contact surface of the first electrode element and the side walls define a gas-filled thermal isolation cell adjacent the phase change element.
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Ahn, S. J. et al., “Highly Reliable 5nm Contact Cell Technology for 256Mb PRAM,” VLSI Technology, Digest o
Ho Chia-Hua
Hsieh Kuang Yeu
Lai Erh-Kun
Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Vu Hung
Webb Vernon P
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