AIGaInN single-crystal wafer

Details AIGaInN single-crystal wafer AIGaInN single-crystal wafer

2007-06-19

2007-06-19

Hiteshew, Felisa (Department: 1722)

Chemistry of inorganic compounds

Silicon or compound thereof

Oxygen containing

C117S085000

Reexamination Certificate

active

10908922

ABSTRACT:
AlGaInN single-crystal wafer with alleviated cracking and improved utilization rate and cost effectiveness. A hexagonal AlxGayIn1−(x+y)N(0<x≦1, 0≦y<1, x+y≦1) single-crystal wafer, characterized in that the wafer has a thickness T(cm) and a principal face with a surface area S(cm2), the area S and thickness T satisfying the conditions S≧10 cm2and 0.006S≧T≧0.002S.

REFERENCES:
patent: 5858086 (1999-01-01), Hunter
patent: 6063185 (2000-05-01), Hunter
patent: 6596079 (2003-07-01), Vaudo et al.
I. Yonenaga, et al., “High-Temperature Hardness of Bulk Single-Crystal AIN,” Japanese Journal of Applied Physics, vol. 40, 2001, pp. L426-427.
R. Schlesser, et al., “Seeded Growth of AIN Bulk Single Crystals by Sublimation,” Journal of Crystal Growth, Jun. 2002, pp. 416-420, vol. 241, No. 4, North-Holland, Amsterdam, NL.

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