Aging treatment for semiconductor gas sensor

Details Aging treatment for semiconductor gas sensor Aging treatment for semiconductor gas sensor

1981-04-20

1987-09-01

Goldberg, E. A.

Electrical resistors

Resistance value responsive to a condition

Gas, vapor, or moisture absorbing or collecting

338 35, 219 1055B, 219 1055R, H01L 700

Patent

active

046911863

ABSTRACT:
A SnO.sub.2 semiconductor gas sensor for use in a cooking apparatus to detect the cooking condition is manufactured through an aging treatment for stabilizing the operation of the SnO.sub.2 semiconductor gas sensor. In the aging treatment, the SnO.sub.2 semiconductor gas sensor is disposed in a gas ambience including a gas which is developed in the cooking apparatus. More specifically, the gas ambience includes a dimethyl siloxane gas which is developed from a heated silicone compound. The gas ambience in the aging treatment is held at a high temperature, for example, 150.degree. C. through 250.degree. C. to provide the SnO.sub.2 semiconductor gas sensor of which the resistance value and sensitivity are stable even in the high temperature ambience when oven cooking is performed by the cooking apparatus.

REFERENCES:
patent: 3644795 (1972-02-01), Taguchi
patent: 3955268 (1976-05-01), Chou et al.
patent: 4259292 (1981-03-01), Ichinose et al.
patent: 4311895 (1982-01-01), Tanabe

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