Afocal concentrator for low wavelength lithography, particularly

Details Afocal concentrator for low wavelength lithography, particularly Afocal concentrator for low wavelength lithography, particularly

1993-04-30

1996-01-16

Wintercorn, Richard A.

Photocopying

Including fiber optics

355 67, G03B 2700

Patent

active

054852439

ABSTRACT:
Fine, sub-micron line features and patterns are created in a sensitized layer on a semiconductor wafer by a beam of low wavelength radiation, such as X-rays or Gamma-rays. A stream of such radiation is concentrated and collimated by a concentrator, the output of which is disposed in close proximity to the sensitized surface of the wafer. In this manner, the sensitized surface can be converted from one chemical state to another chemical state, essentially point-by-point. By moving one or the other of the beam or the wafer, line features can be converted in the sensitized surface. Typically, non-converted areas of the sensitized surface are removed, for further processing a layer underlying the sensitized surface. The concentrator is useful in for directing a stream of radiation from a continuously emitting source, such as from a pellet of Cobalt-60, onto the sensitized surface of the wafer when a shutter mechanism is incorporated either upstream (towards the source) or downstream (towards the wafer) from the concentrator.

REFERENCES:
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patent: 5192869 (1993-03-01), Kumakhov
patent: 5274228 (1993-12-01), Kaplan

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