Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Reexamination Certificate
2011-05-31
2011-05-31
Stark, Jarrett J (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
C257S777000, C257S790000, C257SE25030, C257SE25013, C257SE23019, C257SE23085
Reexamination Certificate
active
07952196
ABSTRACT:
An interconnect assembly for use in high frequency applications includes an interconnect structure, a plurality of electronic die disposed on the interconnect structure, and an encapsulant at least partially surrounding the plurality of electronic die. The interconnect structure includes a plurality of layers. The interconnect assembly further includes a thermal management layer disposed within a portion of the encapsulant and proximate to the plurality of electronic die and a controlled impedance interconnect connected to the interconnect structure and extending to a peripheral surface of the interconnect assembly.
REFERENCES:
patent: 7768113 (2010-08-01), Ozguz et al.
patent: 2006/0267213 (2006-11-01), Ozguz et al.
patent: 2007/0035033 (2007-02-01), Ozguz et al.
PGS Graphite Sheets, Feb. 2006, Panasonic.
Durocher Kevin Matthew
Iannotti Joseph Alfred
Kapusta Christopher James
Lockheed Martin Corporation
McDermott Will & Emery LLP
Stark Jarrett J
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