Aerosol deposition and film formation of silicon

Details Aerosol deposition and film formation of silicon Aerosol deposition and film formation of silicon

1990-11-09

1991-12-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437233, 437973, 437967, 427 13, 427 25, H01L 21302

Patent

active

050752570

ABSTRACT:
A novel method for the deposition of silicon and the formation of silicon films. More specifically, the process provides an aerosol generating technique, wherein silicon powder of optimum particle size is aerosolized, charged, and then electrostatically deposited onto high melting point substrates, which may include semiconducting, insulating, and conducting materials such as silicon, sapphire, and molybdenum, respectively. The powder coated substrates are subsequently heat treated at optimum times and temperatures, resulting in the formation of polycrystalline silicon films.

REFERENCES:
patent: 4233338 (1980-11-01), Ricard et al.
patent: 4332838 (1982-06-01), Wegrzyn
patent: 4357200 (1982-11-01), Grabmaier
patent: 4440800 (1984-04-01), Morton et al.
patent: 4449286 (1984-05-01), Dahlberg
patent: 4615903 (1986-10-01), Miller

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