Electricity: electrical systems and devices – Electrolytic systems or devices – Solid electrolytic capacitor
Reexamination Certificate
2008-03-11
2008-03-11
Ha, Nguyen T. (Department: 2831)
Electricity: electrical systems and devices
Electrolytic systems or devices
Solid electrolytic capacitor
C361S508000, C361S509000, C361S523000, C361S525000, C361S516000
Reexamination Certificate
active
07342774
ABSTRACT:
The present invention generally relates to improved capacitors; in particular, the present invention provides advanced valve metal (AVM) anodes and methods for fabricating AVM anodes having complex surface and interior features for use in high energy density capacitors. Such anodes find use in high voltage capacitors incorporated into implantable medical devices (IMDs), among other uses. The AVM anodes may be pressed into virtually any arbitrary shape and may have a gradually changing (or substantially constant) density profile throughout the AVM anode. Such AVM anodes may also be perforated or shaped to receive one or more cathode members. The AVM anodes enhance packaging efficiency for compact high energy density capacitors.
REFERENCES:
patent: 3345545 (1967-10-01), Bourgault et al.
patent: 4184192 (1980-01-01), Yoshida et al.
patent: 4599788 (1986-07-01), Love et al.
patent: 5189770 (1993-03-01), Waidhas et al.
patent: 5369547 (1994-11-01), Evans
patent: 5469325 (1995-11-01), Evans
patent: 5522851 (1996-06-01), Fayram
patent: 5559667 (1996-09-01), Evans
patent: 5584890 (1996-12-01), MacFarlane et al.
patent: 5801917 (1998-09-01), Elias
patent: 5837121 (1998-11-01), Kinard et al.
patent: 5908151 (1999-06-01), Elias et al.
patent: 5983472 (1999-11-01), Fayram et al.
patent: 6006133 (1999-12-01), Lessar et al.
patent: 6231993 (2001-05-01), Stephenson et al.
patent: 6235181 (2001-05-01), Kinard et al.
patent: 6238810 (2001-05-01), Strange et al.
patent: 6275729 (2001-08-01), O'Phelan et al.
patent: 6375688 (2002-04-01), Akami et al.
patent: 6409776 (2002-06-01), Yan et al.
patent: 6413409 (2002-07-01), Otowa et al.
patent: 6519137 (2003-02-01), Nitta et al.
patent: 6576524 (2003-06-01), Evans et al.
patent: 6709946 (2004-03-01), O'Phelan et al.
patent: 6801424 (2004-10-01), Nielsen et al.
patent: 1 540 332 (1977-12-01), None
Power Geometry and Structural Design of the High Volumetric Efficiency Tantalum Electrolytic Capacitor—IEEE Transactions on Parts, Hybrids, and Packaging, vol. PHP-9, No. 3, September 1793—Stephen E. Hluchan.
Approaching the Limits: The Latest Developments in Solid Tantalum Capacitors—Electronic Engineering Oct. 1991—Bill Millman.
Carts '98 Program—Lowest ESR Tantalum Chip Capacitor, Eric K. Reed, Jim C. Marshall, John D. Prymak.
Carts—Europe '98—Lowest ESR Tantalum Chip Capacitor, Eric K. Reed, Jim C. Marshall, John D. Prymak.
Carts '99-18 Milliohms and Falling—New Ultra-Low ESR Tantalum Chip Capacitors, Eric K. Reed, Jim C. Marshall.
Carts—Europe '99—Lowest Available ESR Conformally-Coated Multiple-Anode Tantalum Capacitor—Jeremy Ladd, Vishay Sprague.
Carts—Europe 2001—Improved ESR on MnO2Tantalum Capacitors at Wide Voltage Range—I. Horacek, T. Zednicek, M. Komarek, J. Tomaso, S. Zednicek, W. A. Millman, J. Sikula, J. Hlavka.
Carts 2002—Lowest ESR Tantalum Capacitors With High CV Values—H. Zillgen, V. Döge, W. Braunwarth.
Hossick-Schott Joachim
May Steve J.
Norton John D.
Rorvick Anthony W.
Bauer Steve
Ha Nguyen T.
McDowall Paul H.
Medtronic Inc.
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