Advanced thermoelectric materials with enhanced crystal lattice

Batteries: thermoelectric and photoelectric – Thermoelectric – Peltier effect device

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

1362361, 136239, 136240, 257467, 257930, H01L 3518

Patent

active

057477280

ABSTRACT:
New skutterudite phases including Ru.sub.0.5 Pd.sub.0.5 Sb.sub.3, RuSb.sub.2 Te, and FeSb.sub.2 Te, have been prepared having desirable thermoelectric properties. In addition, a novel thermoelectric device has been prepared using skutterudite phase Fe.sub.0.5 Ni.sub.0.5 Sb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using powder metallurgy techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities and good Seebeck coefficients. These materials have low thermal conductivity and relatively low electrical resistivity, and are good candidates for low temperature thermoelectric applications.

REFERENCES:
patent: 2588254 (1952-03-01), Lark-Horowitz et al.
patent: 2798989 (1957-07-01), Welker
patent: 3124936 (1964-03-01), Melehy
patent: 3259759 (1966-07-01), Giaever
patent: 3296033 (1967-01-01), Scuro et al.
patent: 3338753 (1967-08-01), Horsting
patent: 3342567 (1967-09-01), Dingwall
patent: 3356464 (1967-12-01), Hulliger
patent: 3626583 (1971-12-01), Abbott et al.
patent: 3674568 (1972-07-01), Caprarola
patent: 3721583 (1973-03-01), Blakeslee
patent: 3873370 (1975-03-01), Hampl, Jr. et al.
patent: 4029520 (1977-06-01), Hampl, Jr.
patent: 4088515 (1978-05-01), Bladeslee et al.
patent: 4261771 (1981-04-01), Dingle et al.
patent: 4368416 (1983-01-01), James
patent: 4457897 (1984-07-01), Stanley et al.
patent: 4469977 (1984-09-01), Quinn et al.
patent: 4620897 (1986-11-01), Nakajima
patent: 4644753 (1987-02-01), Burke
patent: 4664960 (1987-05-01), Ovshinsky
patent: 4786335 (1988-11-01), Knowles et al.
patent: 4847666 (1989-07-01), Heremans et al.
patent: 4855810 (1989-08-01), Gelb et al.
patent: 4869971 (1989-09-01), Nee et al.
patent: 4999082 (1991-03-01), Kremer et al.
patent: 5006178 (1991-04-01), Bijvoets
patent: 5021224 (1991-06-01), Nakajima
patent: 5051786 (1991-09-01), Nicollian et al.
patent: 5064476 (1991-11-01), Recine, Sr.
patent: 5156004 (1992-10-01), Wu et al.
patent: 5181086 (1993-01-01), Yoshida
patent: 5210428 (1993-05-01), Goossen
patent: 5288336 (1994-02-01), Strachan et al.
patent: 5415699 (1995-05-01), Harman
patent: 5436467 (1995-07-01), Elsner et al.
patent: 5439528 (1995-08-01), Miller
patent: 5448109 (1995-09-01), Cauchy
patent: 5610366 (1997-03-01), Fleurial et al.
G. G. Dartau, "Thermoelectric Properties of Cobalt Antimonides," Electronic Phenomena, vol. 55, May 1961, 8058.
Vining, C.B. & J.-P. Fleurial, "Silicon-Germanium: an Overview of Recent Developments," Proceedings of the Xth Intl. Conference on thermoelectrics, Univ. of Wales, Cardiff, UK, pp. 1-14, Sep. 10-12, 1991.
Caillat, T., et al., "Search for New High Temperature Thermoelectric Materials," Proceedings of the 27th Intersociety Energy Conversion Engineering Conference, pp. 3499-3503, 8/3-7/92.
Caillat, T., et al., "Thermoelectric Properties of a New Semiconductor IrSb.sub.3," Proceedings of the XIth Intl. Conference on Thermoelectrics, Univ. of Texas, Arlington, TX pp. 98-101, Oct. 7-9, 1992.
Caillat, T., et al., "Phase Diagram of the Ir-Sb System on the Antimony-Rich Part," Journal of Alloys and Compounds, 1993.
Kjekshus, A., "Thigh Temperature X-Ray Study of the Thermal Expansion of IrAs.sub.3 and IrSb.sub.3," Acta Chemica Scandinava, pp. 678-681, 1961.
Fleurial, J.-P. "Thermal and Electrical Transport Properties Modeling of Bi.sub.2 Te.sub.3 -Based Alloys," Proceedings of the XIth Intl. Conf. on Thermoelectrics, Univ. of Texas, Arlington, TX pp. 276-281, Oct. 7-9, 1992.
Bass, J.C. and N. Elsner, "Current Thermoelectric Programs at Hi-Z Technology, Inc.," Proceedings of the XIth Intl. Conference on Thermoelectrics, Univ. of Texas, Arlington, TX, pp. 1-3, Oct. 7-9, 1992.
Borshchevsky, A., et al., "Two-Zone Bridgman Furnace with Sharp Thermal Gradient," NASA Tech Brief, 18 (3) Item #74, Mar. 1994.
Dudkin, L.D., et al., "On the Doping of the Semiconductor Compound CoSb.sub.3," Zhur. Neorg. Khim., 1958.
Feschotte P., and D. Lorin, "Les Systemes Binaires Fe-Sb, Co-Sb et Ni-Sb," J. Less Common Metals, pp. 155, 255-269, 1989.
Kajikawa, T., et al., "Advancement of Thermoelectric Energy Conversion Systems in Japan," Proceedings of the XIth Intl. Conference on Thermoelectrics, Univ. of Texas, Arlington, TX, pp. 175-180, Oct. 7-9, 1992.
Kliche, G. W. Bauhofer, "Infrared Reflection Spectra and Electrical Properties of the Skutterudite RhSb.sub.3," Mat. Res. Bull., (22), pp. 551-555, 1987.
Korenstein, R. et al., "Preparation and Characterization of the Skutterudite-Related Phases CoGe.sub.1.5 and CoGe.sub.1.5 Se.sub.1.5," Inorg. Chemist., 16(9), pp. 2344-2346, 1977.
Lutz, H.D., et al. "Far-Infrared Spectra, Optical and Dielectric Constants, Effective Charges and Lattice Dynamics of the Skutterudites CoP.sub.3 CoAs.sub.3 and CoSb.sub.3," Phys. Stat. Sol. (b), pp. 112, 549-557, 1982.
Lyons, A., et al., "The Preparation and Characterization of Some Skutterudite Related Compounds," Mat. Res. Bull., (13), pp. 125-128, 1978.
Nikolaev, Yu V., et al., "A Terrestrial Solar Power Plant with Direct Energy Conversion," Proceedings of the 27th Intersociety Energy Conversion Conference, pp. 3433-3436, Aug. 3-7, 1992.
Vining, C.B., "The Thermoelectric Limit ZT=1: Fact or Artifact . . . ," Proceedings of the XIth Intl. Conference on Thermoelectrics, Univ. of Texas, Arlington, TX, pp. 223-231, Oct. 7-9, 1992.
Zhuravlev, N.N., et al., Vestn. Mosk. Univ., Ser. Mat., Mekh, Astron., Fix. I Khim., 13 (5) pp. 79-82, 1958.
Caillat, T., Borshchevsky, A., and Fleurial, J.P., "Existence and Some Properties of New Ternary Skutterudite Phases", Proceedings of the XIII Intl. Conf. on Thermoelectrics, Kansas City, MO, Aug. 30-Sep. 1, 1994, pp. 1-9.
G. D. Mahan, et al., "Thermoelectric Devices Using Semiconductor Quantum Wells" 1994 American Institute of Physics, J. App. Phys. 76 (3) 1 Aug. 1994, pp. 1899-1901.
L.D. Hicks, et al., "Use of Quantum-Well Superlattice to Obtain a High Figure of Merit from Nonconventional Thermoelectric Materials" 1993 American Institute of Physics, Appl. Phys. Lett. 63 (23) 6 Dec. 1993, pp. 3230-3232.
International Search Report dated Dec. 20, 1994 for International Application No. PCT/US94/08452 filed 28 Jul. 1994.
L. D. Dudkin, N. Kh. Abrikosov, "A Physicochemical Investigation of Cobalt Antimonides" Zhurnal Neorganicheskoi Khimii, vol. I, No. 9, 1956, pp. 2096-2105 (Journal of Inorganic Chemistry, USSR), pp. 169-180.
L. D. Dudkin, "The Chemical Bond in Semiconducting Cobalt Triantimonide" Sov. Phys.--Tech. Phys., (1958) pp. 216-219.
L. D. Dudkin and N. Kh. Abrikosov, "On The Doping of the Semiconducttor Compound CoSb.sub.3 " Sov. Phys. Solid State, (1959), pp. 126-133.
L. D. Dudkin, N. Kh. Abrikosov, "Effect of Nickel on the Properties of The Semiconducting Compound, CoSb.sub.3 " Zhurnal Neorganicheskoi Khimii, vol. II, No. 1, 1957, pp. 212-221 (Journal of Inorganic Chemistry, USSR), pp. 325-338.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Advanced thermoelectric materials with enhanced crystal lattice does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Advanced thermoelectric materials with enhanced crystal lattice , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Advanced thermoelectric materials with enhanced crystal lattice will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-56627

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.