Advanced technique to improve the bonding arrangement on silicon

Details Advanced technique to improve the bonding arrangement on silicon Advanced technique to improve the bonding arrangement on silicon

1992-11-13

1995-08-29

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437246, 437241, 148DIG17, H01L 21465

Patent

active

054459990

ABSTRACT:
The present invention teaches a method for fabricating an ultrathin uniform dielectric layer over a silicon or polysilicon semiconductor substrate. The method entails first providing a substrate having a conductive area into a chamber. Subsequently, the first conductive material is destabilized by introducing it to reactive gas and radiant energy in situ. The reactive gas can be Ar-H.sub.2, H.sub.2, GeH.sub.4 or NF.sub.3 gas. The radiant energy source can be ultraviolet ("UV") or Tungsten Halogen lamps preferably having an approximate range of 0.2 to 1.6 .mu.m to provide heat of approximately 850.degree. to 1150.degree. C. for approximately 10 to 60 seconds at a vacuum pressure range of 10.sup.-10 Torr to atmospheric pressure. This process removes the native oxide and breaks the molecular clusters present on the silicon or polysilicon surface. Thereafter, a first dielectric layer having a substantially uniform thickness forms directly above the substrate by the in situ introduction of NH.sub.3 with the radiant energy generating heat of approximately 850.degree. to 1150.degree. C. for approximately 10 to 60 seconds at a vacuum pressure range of 10.sup.-10 Torr to atmospheric pressure. Finally, a second silicon nitride layer is deposited by low pressure chemical vapor deposition or plasma nitridation to create a combined thickness of both dielectric layers of 40 to 100 .ANG..

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