Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1996-10-10
1998-09-08
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257 11, 257442, 257443, 257466, 313309, 313336, 313351, 313500, 313501, H01L 2906, H01L 2912
Patent
active
058048332
ABSTRACT:
A detector to be used for detecting photons from the visible to far infrared spectrum is described. The detector uses unique photocathodes called Advanced Semiconductor Emitter Technology (ASET) as its critical element for converting the detected photons to electrons which are emitted into a vacuum. The electron is multiplied by accelerations and collisions creating a signal larger than the sensor noise and thus allowing the photon to be detected. ASET is/composed of distinct detector and emitter technologies.
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Bailey Howard W.
Stettner Roger
Advanced Scientific Concepts Inc.
Mintel William
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