Advanced semiconductor devices fabricated with passivated high a

Details Advanced semiconductor devices fabricated with passivated high a Advanced semiconductor devices fabricated with passivated high a

1999-04-16

2000-04-11

Picardat, Kevin M.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

438 46, 438 47, H01L 2100

Patent

active

060487488

ABSTRACT:
For AlGaAs LEDs the confining layers adjoining the active layer possess the highest Al composition. From failure analysis of non-passivated, WHTOL-aged, AlGaAs LEDs, it was discovered that corrosion occurs the fastest at the exposed surfaces of the high Al-content confining layers. By placing a high-quality native oxide at the exposed surfaces of the high Al-content confining layers which protect from the formation of the `poor` oxide, it is possible for LEDs to retain essentially their same light output after 2,000 hours of WHTOL testing. Further, it is possible to improve carrier confinement, carrier injection, wave guiding, and other properties by increasing the Al-content of different layers.

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