Advanced probe card and method of fabricating same

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

Reexamination Certificate

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Reexamination Certificate

active

07112975

ABSTRACT:
In one embodiment, an anti-wafer structure includes a silicon on insulator (SOI) layer and a plurality of probe dice formed on the SOI layer. Each of the probe die may have a pad layout corresponding to a pad layout of a die on a wafer under test. A plurality of holes may extend through the SOI layer and the plurality of probe dice, with each hole corresponding to a pad on a probe die. The anti-wafer structure may be advantageously used in an advanced probe card. Techniques for fabricating an anti-wafer and an advanced probe card are also disclosed.

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