Advanced power device process for low drop

Details Advanced power device process for low drop Advanced power device process for low drop

1993-05-05

1996-08-06

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437141, H01L 21306, H01L 2122, H01L 2138

Patent

active

055433359

ABSTRACT:
A method for fabricating a power semiconductor device with a low forward voltage drop using polymer passivation. A polymer passivation layer is deposited over the device. Impurities are introduced into the backside of the device by ion implantation, the backside of the device being on the opposite side of the semiconductor device from the polymer passivation layer. The impurities are then diffused into the semiconductor device.

REFERENCES:
patent: 3832247 (1974-08-01), Saddler et al.
patent: 4341594 (1982-09-01), Carlson et al.
patent: 4356056 (1982-10-01), Cornette
patent: 4588472 (1986-05-01), Shimizu
patent: 4589928 (1986-05-01), Dalton et al.
patent: 4610730 (1986-09-01), Harrington et al.
patent: 4695867 (1987-09-01), Flohrs et al.
patent: 4978419 (1990-12-01), Nada et al.
patent: 5031021 (1991-07-01), Baba et al.
patent: 5264378 (1993-11-01), Sakurai
patent: 5397718 (1995-03-01), Furuta et al

Affiliated with

Also associated with

Rating

Advanced power device process for low drop does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Advanced power device process for low drop, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Advanced power device process for low drop will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2190720