Advanced lateral overflow drain antiblooming structure for virtu

Details Advanced lateral overflow drain antiblooming structure for virtu Advanced lateral overflow drain antiblooming structure for virtu

1994-03-30

1995-09-26

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257223, 257230, 257243, H01L 2978

Patent

active

054536324

ABSTRACT:
The lateral overflow drain for virtual phase devices includes: a semiconductor region 72 of a first conductivity type; a drain region 24 of the first conductivity type formed in the semiconductor region 72; a threshold adjust region 22 formed in the semiconductor region 72 and surrounding the drain region 24; an electrode 20 overlying and connected to the drain region 24, the electrode 20 overlying and separated from at least a portion of the threshold adjust region 22; and virtual gates 30 and 32 of the second conductivity type in the semiconductor region 72 spaced apart from the drain region 24 and partially surrounding the drain region 24.

REFERENCES:
patent: 5151380 (1992-09-01), Hynecek
patent: 5286990 (1994-02-01), Hynecek
patent: 5341008 (1994-08-01), Hynecek
A Channel-Stop Defined Barrier and Drain Antiblooming Structure for Virtual Phase CCD Image Sensors, W. F. Keenan, et al., IEEE Transaction on Electron Devices, vol. No. 36, Sep. 1989.

Affiliated with

Also associated with

Rating

Advanced lateral overflow drain antiblooming structure for virtu does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Advanced lateral overflow drain antiblooming structure for virtu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Advanced lateral overflow drain antiblooming structure for virtu will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1553520