Advanced isolation scheme for deep submicron technology

Details Advanced isolation scheme for deep submicron technology Advanced isolation scheme for deep submicron technology

1995-04-06

1996-09-10

Dang, Trung

Fishing, trapping, and vermin destroying

437 26, 437 28, 437 97, 437154, 437149, H01L 2120

Patent

active

055545629

ABSTRACT:
An oxide layer is thermally grown over a semiconductor body, and openings are etched in the oxide layer to expose portions of the surface of the semiconductor body. Then, epitaxial regions are grown from the semiconductor body into the openings in the oxide layer, which epitaxial regions will eventually become the active regions of devices.

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Hu et al.; "Oxide Wall Isolation for FET Integrated Circuits" IBM Technical Disclosure Bulletin; vol. 25, No. 7A, 1982, pp. 3347-3349.

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