Advanced etching method for VLSI fabrication

Details Advanced etching method for VLSI fabrication Advanced etching method for VLSI fabrication

1997-12-19

2000-02-29

Nguyen, Nam

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438705, 438787, 438786, 438791, 438524, 438549, 438551, 20419237, H01L 2100

Patent

active

060308982

ABSTRACT:
The present invention provides a method of etching microelectronic structures. The method utilizes an ion implantation device projecting ions into a silicon semiconductor or conducting substrate to selectively damage the surface causing damage differential. This process is highly controllable and directable, allowing fine manipulation of the substrate surface. After the ion implantation has destroyed selected portions of the surface, standard etching techniques known in the art can be used to selectively remove the damaged portions of the surface. The advantage of this technique is that it confers upon relatively imprecise prior art etching techniques a high degree of precision. Such techniques can be used to create isolation trenches by filling the surface with electrically isolating materials which isolate one semiconductor device from another.

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