Advanced electromigration resistant interconnect structure and p

Details Advanced electromigration resistant interconnect structure and p Advanced electromigration resistant interconnect structure and p

1989-03-22

1991-03-19

Mintel, William

Fishing, trapping, and vermin destroying

357 65, 357 71, 357 67, 437957, 437942, 437180, 437182, H01L 2348, H01L 2940

Patent

active

050015419

ABSTRACT:
An advanced electromigration resistant lead (34) is formed over an insulator layer (36). The lead (34) is processed from a metallic film having a known grain size. A rapid thermal anneal is conducted to increase the grain size and to reduce the number of triple points. The lead (34) is also engineered to have rounded edges (40) rather than sharp edges. The rounded edges (40) reduce the amount of stress in the lead (34) and help further reduce the effects of electromigration.

REFERENCES:
patent: 4352239 (1982-10-01), Pierce
patent: 4438450 (1984-03-01), Sheng et al.
patent: 4524378 (1985-06-01), Cockrum
patent: 4566177 (1986-01-01), Van de Ven et al.

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