Advanced CMOS circuitry that utilizes both sides of a wafer surf

Details Advanced CMOS circuitry that utilizes both sides of a wafer surf Advanced CMOS circuitry that utilizes both sides of a wafer surf

1998-11-13

2000-11-21

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

257446, 257501, 257506, 257618, 257708, 257774, 257777, 257778, H01L 2500

Patent

active

061507083

ABSTRACT:
An integrated circuit employing both sides of a base substrate or wafer and a method of making the same are provided. In one aspect, the integrated circuit includes a base substrate that has a first side and a second side opposite the first side. The first side has a first semiconductor layer and a first isolation structure positioned thereon wherein the first side surrounds the first semiconductor layer. The second side has a second semiconductor layer and a second isolation structure positioned thereon wherein the second isolation structure surrounds the second semiconductor layer. A first circuit device is positioned on the first semiconductor layer. A second circuit device is positioned on the second semiconductor layer. The method enables simultaneous processing of both sides of a given wafer. Fabrication efficiency is increased through higher throughput and much higher yields per wafer.

REFERENCES:
patent: 5359219 (1994-10-01), Hwang
patent: 5815372 (1998-09-01), Galls
Stanley Wolf and Richard N. Tauber; Silicon Processing for the VLSI Era, vol. 1--Process Technology; pp. 8-10, 23-25 and 64-69; 1986.

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