Advance metallization process

Details Advance metallization process Advance metallization process

1996-10-31

2000-05-23

Chaudhuri, Olik

Semiconductor device manufacturing: process

Forming schottky junction

Compound semiconductor

438620, 438618, 438622, H01L 2348, H01L 2352, H01L 2940

Patent

active

060665483

ABSTRACT:
An exemplary implementation of the present invention includes a method for forming conductive lines fabricated in a semiconductor device, the method comprising the steps of forming a first layer of patterned conductive lines, having substantially vertical sidewalls, on a supporting material; of forming insulative spacers about the substantially vertical sidewalls; of forming trenches into the supporting material that align to the insulative spacers; and of forming a second layer of patterned conductive lines such that each line is at least partially embedded within a corresponding trench. Preferably, the conductive lines, formed by a double metal process, are recessed into a supporting material that has a substantially planar surface.

REFERENCES:
patent: 4914056 (1990-04-01), Okumura
patent: 5229325 (1993-07-01), Park et al.
patent: 5561082 (1996-10-01), Matsuo et al.
patent: 5654237 (1997-08-01), Suguro et al.
patent: 5763323 (1998-06-01), Kim et al.
patent: 5840621 (1998-11-01), Kasai
patent: 5854128 (1998-12-01), Ma et al.

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