Metal working – Barrier layer or semiconductor device making
Patent
1998-07-09
1999-12-07
Monin, Jr., Donald L.
Metal working
Barrier layer or semiconductor device making
295921, 438 5, 438935, H01S 400
Patent
active
05997589&
ABSTRACT:
A semiconductor fabrication chamber is disclosed which contains (a) a main chamber; (b) a baffle member separating the main chamber into a first chamber and a second chamber, (c)a vacuum pump to pump gas through the main chamber; and (d) a computer. The first chamber contains a gas inlet, a metering device, and a supporting member to support a wafer to be fabricated, and the second chamber contains a gas outlet and a first pressure gauge. The baffle member contains at least one adjustable opening which is controllable by the computer. Prior to a fabrication process, such as plasma etching, a pressure difference between the first pressure gauge and a temporary pressure gauge installed inside the second chamber is calculated and compared against a standard value, and the computer will adjust the opening of the baffle plate so as to minimize such pressure difference, which is related to the deposition of particulate matters on the opening. A flow meter can also be installed inside the second chamber for adjustment of the baffle plate opening during the fabricating process.
REFERENCES:
patent: 4836233 (1989-06-01), Milgate
patent: 4859625 (1989-08-01), Matsumoto
patent: 5015327 (1991-05-01), Taguchi et al.
patent: 5261935 (1993-11-01), Ishii et al.
patent: 5702562 (1997-12-01), Wakahara
patent: 5900103 (1999-05-01), Tomoyasu et al.
Dietrich Michael
Liauh W. Wayne
Monin, Jr. Donald L.
Winbond Electronics Corp.
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