Adjustment of thick film resistor (TCR) by laser annealing

Details Adjustment of thick film resistor (TCR) by laser annealing Adjustment of thick film resistor (TCR) by laser annealing

1986-10-07

1987-11-03

Echols, P. W.

Metal working

Method of mechanical manufacture

Electrical device making

219121LM, 427 531, 427101, H01C 1706

Patent

active

047035579

ABSTRACT:
The adjustment of the temperature coefficient of resistance (TCR) of a thick film resistor by laser annealing is disclosed. The thick film resistor is fired for a controlled time and temperature sufficient to burn off the organic material in the resistive paint, and to provide an initial adjustment of the (TCR), but prior to obtaining the desired (TCR) range. The resistor is then laser annealed to controllably adjust the (TCR) of the resistor within the desired (TCR) range. The fixture used to hold the substrate during laser annealing is preferably controllably heated to avoid thermal shock to the resistor during laser annealing. A microprocessor is preferably used to monitor the (TCR) during the laser annealing process. At least one of the laser scan speed, laser beam diameter, laser beam power, and number of annealing passes are used to controllably adjust the resistor (TCR) to within the desired (TCR) range.

REFERENCES:
patent: 4467519 (1984-08-01), Glang et al.
Lins, Stanley J. & Morrison, Dr. Richard D., "Laser-Induced Resistivity Changes in Film Resistors", Defense Systems Div., Univac Div. of Sperry Rand Corp., St. Paul, Minn., presented at Wescon, Los Angeles, Calif., Aug. 23-26, 1966.
Veeraraghavan, V. G., "In-situ Annealing of Cermet Film" IBM Tech. Disclosure Bulletin, vol. 26, No. 4, Sep. 1983, p. 1950.
Lever, R. F., "Background Heating for Laser Annealing" IBM Tech. Disclosure Bulletin, vol. 21, No. 10, Mar. 1979, p. 4040.

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