Adjustment of masks by re-flow

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S618000, C438S696000, C438S702000, C257SE21214, C257SE31110

Reexamination Certificate

active

07960206

ABSTRACT:
As a step in performing a process on a structure, a hole pattern is provided in a thin layer of organic resin masking material formed over the structure to provide a process mask. A processing step is then performed through the openings in the mask, and after a processing step is completed the mask is adjusted by a re-flow process in which the structure is placed into an atmosphere of solvent vapor of a solvent of the mask material. By way of the re-flow process, the mask material softens and re-flows to reduce the size of the openings in the mask causing edges of the surface areas on which the processing step was performed to be covered by the mask for subsequent processing steps.

REFERENCES:
patent: 3921916 (1975-11-01), Bassous
patent: 3976524 (1976-08-01), Feng
patent: 4015986 (1977-04-01), Paal
patent: 4022932 (1977-05-01), Feng
patent: 4174252 (1979-11-01), Kressel
patent: 4517106 (1985-05-01), Hopkins
patent: 4872925 (1989-10-01), McMaster
patent: 5266125 (1993-11-01), Rand
patent: 5459001 (1995-10-01), Estes
patent: 5665607 (1997-09-01), Kawama
patent: 5994753 (1999-11-01), Nitta
patent: 6042739 (2000-03-01), Itoh
patent: 6245191 (2001-06-01), Derderian
patent: 6365325 (2002-04-01), Chiang
patent: 6380006 (2002-04-01), Kido
patent: 6518596 (2003-02-01), Basore
patent: 6900548 (2005-05-01), Hashimoto
patent: 6982218 (2006-01-01), Preu
patent: 2001/0053570 (2001-12-01), Kido
patent: 2002/0187573 (2002-12-01), Kido
patent: 2003/0012869 (2003-01-01), Kido
patent: 2003/0029831 (2003-02-01), Kawase
patent: 2003/0076371 (2003-04-01), Fong
patent: 2003/0108822 (2003-06-01), Igawa
patent: 2003/0129548 (2003-07-01), Kido
patent: 2003/0186170 (2003-10-01), Yamashita
patent: 2004/0053800 (2004-03-01), Zhang
patent: 2004/0081909 (2004-04-01), Ohnishi
patent: 2004/0161943 (2004-08-01), Ren
patent: 2006/0292821 (2006-12-01), Young
patent: 2007/0007627 (2007-01-01), Young
patent: 3047884 (1982-07-01), None
patent: 0930641 (1999-07-01), None
patent: 1602847 (1971-02-01), None
patent: 1195944 (1970-06-01), None
patent: 1457924 (1976-12-01), None
patent: 2367788 (2002-04-01), None
patent: 9-127675 (1997-05-01), None
patent: 11340129 (1999-12-01), None
patent: 99/21233 (1999-04-01), None
patent: 00/72368 (2000-11-01), None
patent: 01/47044 (2001-06-01), None
patent: 2005/024927 (2005-03-01), None
Basore, P., “Pilot Production of Thin-Film Crystalline Silicon on Glass Modules,” Conference Record of the 29th IEEE Photovoltaic Specialists Conference, New Orleans, Louisiana, May 19, 2002, pp. 49-52.
Basore, P., “Simplified Processing and Improved Efficiency of Crystalline Silicon on Glass Modules,” Proceedings of the 19th Photovoltaic Solar Energy Conference, Paris, France, Jun. 7, 2004, pp. 455-458.
“Nitric acid,” Wikipedia, the free encyclopedia, <http://en.wikipedia.org/wiki/Nitric—acid> [retrieved Sep. 13, 2007], 5 pages.
Supplementary European Search Report, dated Oct. 16, 2006, issued in corresponding Application No. EP 04761255, filed Sep. 9, 2004.
Teng, K.F., and R.W. Vest, “Application of Ink Jet Technology on Photovoltaic Metallization,” IEEE Electron Device Letters 9(11):591-593, Nov. 1988.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Adjustment of masks by re-flow does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Adjustment of masks by re-flow, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Adjustment of masks by re-flow will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2734109

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.