Adjustment of Josephson junctions by ion implantation

Details Adjustment of Josephson junctions by ion implantation Adjustment of Josephson junctions by ion implantation

1983-05-05

1985-01-01

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 148 15, 357 5, 357 91, 427 63, H01L 3922, H01L 3924, H01L 21265

Patent

active

044909012

ABSTRACT:
A method for trimming the zero voltage Josephson current of a tunnel junction including the steps of measuring the I-V characteristics of the completed junctions to quantify the change in I.sub.o necessary to meet the design requirements, placing the tested Josephson junctions on a metal block which is mounted in the sample chamber of an ion implanter structure which is pumped to 1.10.sup.-6 Torr. The junctions, kept at room temperature and oriented at a direction nearly normal to the ion beam, are implanted with magnetically analyzed ions of energies 50 keV to 2300 keV. Spatial uniformity of the ion implant beam is .+-.2% over a sample. Uniform spatial implantation over a large area sample is obtained by either sweeping of the beam across the sample, or restoring the sample through a stationary beam, determining the required ion dose to effect trimming from calibration curves, remeasuring the I-V characteristics after implantation to confirm that the required I.sub.o trim was effected, and then completing the fabrication of the Josephson device according to standard processing.

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