Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1983-05-05
1985-01-01
Roy, Upendra
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29578, 148 15, 357 5, 357 91, 427 63, H01L 3922, H01L 3924, H01L 21265
Patent
active
044909012
ABSTRACT:
A method for trimming the zero voltage Josephson current of a tunnel junction including the steps of measuring the I-V characteristics of the completed junctions to quantify the change in I.sub.o necessary to meet the design requirements, placing the tested Josephson junctions on a metal block which is mounted in the sample chamber of an ion implanter structure which is pumped to 1.10.sup.-6 Torr. The junctions, kept at room temperature and oriented at a direction nearly normal to the ion beam, are implanted with magnetically analyzed ions of energies 50 keV to 2300 keV. Spatial uniformity of the ion implant beam is .+-.2% over a sample. Uniform spatial implantation over a large area sample is obtained by either sweeping of the beam across the sample, or restoring the sample through a stationary beam, determining the required ion dose to effect trimming from calibration curves, remeasuring the I-V characteristics after implantation to confirm that the required I.sub.o trim was effected, and then completing the fabrication of the Josephson device according to standard processing.
REFERENCES:
patent: 3755092 (1973-08-01), Antula
patent: 3906231 (1975-09-01), Fletcher
patent: 4093503 (1978-06-01), Harris et al.
patent: 4176365 (1979-11-01), Kroger
patent: 4299679 (1981-11-01), Suzuki
Wolf, P., IBM-TDB, 18, (1976), 2645.
Mohr, T. O., IBM-TDB, 20, (1978), 4944.
Harris et al., IBM-TDB, 20, (1977), 2437.
Cuomo et al., IBM-TDB, 25, (1982), 2092.
Broom et al., IBM J. Res. Develop. 24, (Mar. 1980), 206.
Superconducting Device Fabrication by Energetic Ion Damage by E. P. Harris et al., IBM Technical Disclosure Bulletin, vol. 17, No. 2, Jul. 1974, p. 604.
Superconducting Microcircuitry in Layered Compounds using Ion Implantation by E. P. Harris et al., IBM Technical Disclosure Bulletin vol. 17, No. 1, Jun. 1974, p. 257.
Applications of Ion Implantation to the Josephson Tunneling Technology by E. P. Harris, et al., IBM Technical Disclosure Bulletin, vol. 20, No. 6, Nov. 1977, p. 2435.
Annealing of Josephson Junction Devices by S. Basavaiah et al., IBM Technical Disclosure Bulletin vol. 17, No. 11, Apr. 1975, p. 3488.
Rugged Josephson Elements and Arrays by R. B. Laibowitz et al., IBM Technical Disclosure Bulletin, vol. 17, No. 3, Aug. 1974, p. 826.
Fabrication of Planar Josephson Junctions by Laser Irradiation by N. Braslau et al., IBM Technical Disclosure Bulletin, vol. 18, No. 11, Apr. 1976, p. 3845.
Clark Gregory J.
Drake Robert E.
Raider Stanley I.
Goodwin John J.
International Business Machines - Corporation
Roy Upendra
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