Adjustment in a MAPPER system

Details Adjustment in a MAPPER system Adjustment in a MAPPER system

2006-03-28

2006-03-28

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492220, C250S492220, C257S010000, C430S296000

Reexamination Certificate

active

07019312

ABSTRACT:
The present invention relates to a lithography system comprising:means for generating a plurality of light beamlets, andan electron source, arranged to be illuminated by said light beamlets, said electron source comprising a plurality of converter elements at an element distance from each other for converting a light beamlet impinging onto it into an electron beamlet directed towards and focussed on an object plane,said lithography system further comprising control means for manipulating the mutual positions of the light beamlets with respect to the converter elements.These control means can be of optical, thermal, mechanical or magnetical nature, and work on for instance the micro lens array, the converter plate, and the mask.

REFERENCES:
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patent: WO 03/017317 (2003-02-01), None
“Electron Beam Pattern Generator with Photon to Electron Image Conversion”, M. Idesawa, et al, Database accession No. 3742200, XP002242067, pp. 54-58.

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