Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of...
Reexamination Certificate
2006-06-13
2006-06-13
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
C438S312000, C438S933000, C438S938000, C257S183000, C257S197000, C257S565000
Reexamination Certificate
active
07060582
ABSTRACT:
The present invention relates to a semiconductor layer applicable to a hetero-junction bipolar transistor, a forming method thereof, and a semiconductor device and a manufacturing method thereof, for example. The semiconductor layer and the forming method thereof according to the present invention includes a first SiGe film or SiGeC film containing Ge of which the concentration become equal to a thermal expansion coefficient of silicon oxide and a second SiGe film or SiGeC film formed on the first film. In a semiconductor device according to the present invention and a manufacturing method thereof, first and second layers are laminated on an oxide film having an opening, and the first layer has the substantially same thermal expansion coefficient as that of the oxide film and has a thermal expansion coefficient different from that of the second layer. Thus, a stress that is caused by a difference between the thermal expansion coefficients becomes difficult to occur in the laminated film, and hence the occurrence of misfit dislocation can be suppressed. Thus, the present invention is suitable as the application to a hetero-junction bipolar transistor.
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Schonenberg, K.; “The Stability of Si1-xGexStrained Layers on Small-Area Trench-Isolated Silicon”; Feb. 1997; Journal of Materials Research; vol. 12, No. 2; pp. 364-370.
Koumoto Takeyoshi
Yamagata Hideo
Isaac Stanetta
Lebentritt Michael
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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