Adjusting program and erase voltages in a memory device

Details Adjusting program and erase voltages in a memory device Adjusting program and erase voltages in a memory device

2011-05-31

2011-05-31

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185170, C365S185180, C365S185290

Reexamination Certificate

active

07952927

ABSTRACT:
A method and apparatus for adjusting threshold program and erase voltages in a memory array, such as a floating gate memory array, for example. A method includes applying a first voltage level to a first edge word line of a memory block string and applying a second voltage level to a second edge word line of the memory block string. The method might also include applying a third voltage level to non-edge word lines of the memory block string.

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