Adjustable self-aligned air gap dielectric for low...

Details Adjustable self-aligned air gap dielectric for low... Adjustable self-aligned air gap dielectric for low...

2008-04-15

2008-04-15

Tran, Thien F (Department: 2811)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having air-gap dielectric

C438S422000, C438S618000, C438S619000

Reexamination Certificate

active

11418921

ABSTRACT:
An adjustable self aligned low capacitance integrated circuit air gap structure comprises a first interconnect adjacent a second interconnect on an interconnect level, spacers formed along adjacent sides of the first and second interconnects, and an air gap formed between the first and second interconnects. The air gap extends above an upper surface of at least one of the first and second interconnects and below a lower surface of at least one of the first and second interconnects, and the distance between the spacers defines the width of the air gap. The air gap is self-aligned to the adjacent sides of the first and second interconnects.

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V. Arnal, J. Torres, P. Gayet, R. Gonella, P. Spinelli, M. Guillermet, J-P. Reynard, GC. Verove;Integration of a 3 Level Cu-SiO2 Air Gap Interconnect for Sub 0.1 micron CMOS Technologies; IEEE, Jun. 2001, pp. 298-300.

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