Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2006-07-04
2006-07-04
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S758000, C438S619000
Reexamination Certificate
active
07071532
ABSTRACT:
An adjustable self aligned low capacitance integrated circuit air gap structure comprises a first interconnect adjacent a second interconnect on an interconnect level, spacers formed along adjacent sides of the first and second interconnects, and an air gap formed between the first and second interconnects. The air gap extends above an upper surface of at least one of the first and second interconnects and below a lower surface of at least one of the first and second interconnects, and the distance between the spacers defines the width of the air gap. The air gap is self-aligned to the adjacent sides of the first and second interconnects.
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V. Arnal, J. Torres, P. Gayet, R. Gonella, P. Spinelli, M. Guillermet, J-P Reynard, GC. Verove; “Integration of a 3 Level CuSiO2 Air Gap Interconnect for Sub 0.1 micron DMOS Technologies;” IEEE, Jun. 2001, pp. 298-300.
Geffken Robert M.
Motsiff William T.
Canale Anthony
DeLio & Peterson LLC
Nelms David
Nguyen Dao H.
Peterson Peter W.
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