Adjustable method for eliminating trench top corners

Details Adjustable method for eliminating trench top corners Adjustable method for eliminating trench top corners

1997-12-18

1999-10-05

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438713, 438734, 438744, 438221, 216 67, 216 79, H01L 2100

Patent

active

059623420

ABSTRACT:
An adjustable method for making trenches for a semiconductor IC device having eliminated top corners is disclosed. The adjustable method includes forming a masking layer on the surface of the silicon nitride layer covering the device substrate that has openings corresponding to the openings of the trenches formed. Dimension of the masking layer opening is relatively greater than the dimension of the opening of the corresponding trench. An anisotropic etching procedure is then performed against the portions of the device substrate exposed out of the coverage of the masking layer, and the anisotropic etching shapes the trench sidewalls into sloped ones having larger dimension at the opening than at the surface of the filling material inside the trenches. This eliminates the top corners at the edges of the trench opening, charge accumulation and consequent leakage current can thus be prevented.

REFERENCES:
patent: 5843849 (1998-12-01), Hoshino et al.

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