Adjustable mask blank structure for an EUV phase-shift mask

Details Adjustable mask blank structure for an EUV phase-shift mask Adjustable mask blank structure for an EUV phase-shift mask

2011-04-19

2011-04-19

Rosasco, Stephen (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07927765

ABSTRACT:
The invention concerns a process for forming an optical component comprising:a—formation of a multi-layer stack (32, 34) with an adjustment layer (30) made of a metal-semiconductor mix formed in or on the stack,b—etching a part of the multi-layer stack, including at least a part of the adjustment layer,c—an annealing step to contract the adjustment layer within less than 1 nm.

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Torsten Feigl, et al. “Damage Resistant and Low Stress EUV Multilayer Mirrors” Japanese Journal of Applied Physics, The Japan Society of Applied Physics, vol. 41, Part 1, No. 6B, 2002, pp. 4082-4085.
Stefan Braun, et al. “Mo/Si Multilayers with Different barrier Layers for Applications as Extreme Ultraviolet Mirrors” Japanese Journal of Applied Physics, The Japan Society of Applied Physics, vol. 41, Part 1, No. 6B, Jun. 2002, pp. 4074-4081.
Sergiy Yulin, et al. “MuP09: High-temperature MoSi2/Si and Mo/C/Si/C multilayer mirrors” 3rdInternational EUVL Symposium, Nov. 1-4, 2004, Miyazaki, Japan, 1 Page.

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