Adhesive-free process for bonding a semiconductor crystal to an

Details Adhesive-free process for bonding a semiconductor crystal to an Adhesive-free process for bonding a semiconductor crystal to an

1975-01-08

1977-07-05

Goldberg, E. A.

Electric heating

Metal heating

By arc

29589, 219121L, 174 16HS, B23K 1500

Patent

active

040341810

ABSTRACT:
A broad silver coated direct band-gap semiconductor crystal is bonded to a sapphire face plate without using any adhesive by a process of positioning the crystal with a broad surface against the sapphire, and bombarding the crystal with an electron beam raster scanned over the breadth of the crystal until the crystal and sapphire become bonded together.

REFERENCES:
patent: 2668133 (1954-02-01), Brophy et al.
patent: 2798989 (1957-07-01), Welker
patent: 2968723 (1961-01-01), Steigerwald
patent: 3351733 (1967-11-01), Tomono et al.
patent: 3397278 (1967-12-01), Pomerantz
patent: 3417459 (1968-12-01), Pomerantz et al.
patent: 3585350 (1971-06-01), Voytko
patent: 3768157 (1973-10-01), Buie

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