Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2011-08-23
2011-08-23
Williams, Alexander O (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257SE23193, C257SE21505, C257S789000, C257S791000, C257S792000, C257S700000, C257S758000, C430S270100, C562S030000, C562S058000
Reexamination Certificate
active
08004078
ABSTRACT:
Provided is an adhesive composition for a semiconductor device. For example, the adhesive composition comprises a binder resin and a silicon carbide filler. The silicon carbide filler has relatively high thermal conductivity and a relatively low coefficient of thermal expansion (CTE). Accordingly, the adhesive composition containing the silicon carbide filler exhibits improved heat dissipation performance and electrical performance due to high thermal conductivity and shows inhibition of delamination or cracking of semiconductor devices due to low CTE. The silicon carbide has high thermal conductivity, but is electrically non-conductive. Therefore, an electrically conductive adhesive can be obtained by additional incorporation of a silver (Ag) filler into the binder resin.
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Kim Bong Chan
Song Jae Kyu
Yoo Min
Amkor Technology Inc.
Gunnison McKay & Hodgson, L.L.P.
Hodgson Serge J.
Williams Alexander O
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