Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Patent
1998-04-14
1999-10-26
Tsai, Jey
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
438253, 438240, H01G 706
Patent
active
059727225
ABSTRACT:
A high-k dielectric capacitor structure and fabrication method that incorporates an adhesion promoting etch stop layer 200 to promote adhesion of the bottom electrode 220 to the interlevel dielectric layer 210 and to provide a well controlled, repeatable and uniform recess prior to the dielectric 230 deposition. By using a sacrificial layer 200, for example silicon nitride (Si3N4), this layer can act as an etch stop during the recess etch to eliminate parasitic capacitance between adjacent capacitor cells A and B and can promote adhesion of the bottom electrode material 220 to the substrate 210.
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Colombo Luigi
McIntyre Paul
Summerfelt Scott R.
Visokay Mark R.
Donaldson Richard L.
Hoel Carlton H.
Texas Instruments Incorporated
Tsai Jey
Valetti Mark A.
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