Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2000-06-19
2001-06-26
Niebling, John F. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S636000, C257S639000, C257S640000
Reexamination Certificate
active
06252295
ABSTRACT:
DESCRIPTION
TECHNICAL FIELD
The present invention relates to structures comprising silicon carbide containing films and particularly to structures exhibiting enhanced adhesion of the silicon carbide. In addition, the present invention relates to a method for fabricating the silicon carbide containing structures of the present invention. The present invention is especially concerned with semiconductor structures.
BACKGROUND OF INVENTION
The fabrication of semiconductor devices requires providing insulating or dielectric materials at various selected regions of the device. For instance, among the more widely used dielectric materials are silicon dioxide, silicon nitride, silicon oxynitride, certain silicate glasses, and some organic resins. In fact, in some devices, air has been suggested as the desired dielectric.
More recently, amorphous silicon carbide films have been proposed as the interlevel dielectric materials in multilevel semiconductor Back End of Line (BEOL) process integration schemes. Amorphous silicon carbide films exhibit relatively low k values, thereby making them a potential interlevel dielectric.
It has been observed, however, that the adhesion of silicon carbide films to various surfaces employed in semiconductor devices is not as tenacious as would be desired in typical integration schemes. In particular, it has been found that silicon carbide films do not adhere especially well to the typical metallurgy employed in semiconductor devices Such as copper, aluminum and alloys thereof. Also, it has been found that the bond between silicon carbide films and silicon oxide interfaces typically found in semiconductor devices is not as strong as would be desired.
Accordingly, providing for enhanced adhesion between silicon carbide films and these surfaces would be a significant improvement in the art.
SUMMARY OF INVENTION
The present invention provides for enhanced adhesion of silicon carbide to various surfaces found in semiconductor structures. According to the present invention, a graded seal deposition is employed to provide for this improved adhesion.
More particularly, the present invention relates to a structure that comprises a surface selected from the group consisting of a metallic surface and silicon dioxide. A graded deposited film of at least one member selected from the group consisting of silicon dioxide, silicon nitride, and silicon oxynitride is located adjacent the surface. The silicon carbide containing film is located adjacent the graded deposited film. The graded deposited film provides for the enhanced adhesion between the silicon carbide containing film and the above defined surface.
The present invention also relates to a method for fabricating a structure which comprises providing a surface selected from the group consisting of a metallic surface and silicon dioxide. A graded film of at least one member selected from the group consisting of silicon dioxide, silicon nitride, and silicon oxynitride is deposited adjacent the surface. A silicon carbide containing film is then deposited adjacent the graded deposit film.
The present invention also relates to structures obtained by the above process.
Still other objects and advantages of the present invention will become readily apparent by those skilled in the art from the following detailed description, wherein it is shown and described preferred embodiments of the invention, simply by way of illustration of the best mode contemplated of carrying out the invention. As will be realized the invention is capable of other and different embodiments, and its several details arc capable of modifications in various obvious respects, without departing from the invention. Accordingly, the description is to be regarded as illustrative in nature and not as restrictive.
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Thermal Ink Jet Heater Devices Incorporating Diamond-Like Carbon Films as Protective Overcoats,IBM Technical Disclosure Bulletin, vol. 34, No. 2, Jul. 1991, pp. 19-20.
Cote Donna R.
Edelstein Daniel C.
Fitzsimmons John A.
Ivers Thomas H.
Jamison Paul C.
Anderson Jay H.
Connolly Bove Lodge & Hutz
Ghyka Alexander G.
International Business Machines - Corporation
Niebling John F.
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