Adhesion layer for platinum based sensors

Electrical resistors – Resistance value responsive to a condition – Fluid- or gas pressure-actuated

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338306, 338309, 338314, 357 25, 427103, H01L 1010

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active

049529048

ABSTRACT:
The marginal adhesion of platinum to silicon nitride is a serious issue in the fabrication of microbridge mass air flow sensors. High temperature stabilization anneals (500.degree.-1000.degree. C.) are necessary to develop the properties and stability necessary for effective device operation. However, the annealing process results in a significant reduction in the already poor platinum/silicon nitride adhesion. Annealing at relatively high temperatures leads to the development of numerous structural defects and the production of non-uniform and variable sensor resistance values. The use of a thin metal oxide adhesion Layvr, approximately 20 To 100 angstromw in thickness is very effective in maintaining platinum adhesion to silicon nitride, and through the high temperature anneal sequence.

REFERENCES:
patent: 4234405 (1980-11-01), Hesketh et al.
patent: 4423087 (1983-12-01), Howard et al.
patent: 4471405 (1984-09-01), Howard et al.
patent: 4624137 (1986-11-01), Johnson et al.
patent: 4682206 (1987-07-01), Tsuya et al.
W. Diehl, "Platinum Thin-Film Resistors as Accurate and Stable Temperature Sensors", Measurements and Control, Dec. 1982, pp. 155-159.

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