Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Temperature
Reexamination Certificate
2005-06-28
2005-06-28
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Temperature
C257S782000, C438S127000
Reexamination Certificate
active
06911714
ABSTRACT:
A SiC die with Os and/or W/WC/TiC contacts and metal conductors is encapsulated either alone or on a ceramic substrate using a borosilicate (BSG) glass that is formed at a temperature well below upper device operating temperature limits but serves as a stable protective layer above the operating temperature (over 1000° C., preferably >1200° C.). The glass is preferably 30-50% B2O3/70-50% SiO2, formed by reacting a mixed powder, slurry or paste of the components at 460°-1000° C. preferably about 700° C. The die can be mounted on the ceramic substrate using the BSG as an adhesive. Metal conductors on the ceramic substrate are also protected by the BSG. The preferred ceramic substrate is AlN but SiC/AlN or Al2O3can be used.
REFERENCES:
patent: 4374391 (1983-02-01), Camlibel et al.
patent: 4581279 (1986-04-01), Sugishita et al.
patent: 4651192 (1987-03-01), Matsushita et al.
patent: 4775596 (1988-10-01), Holleran et al.
patent: 4810532 (1989-03-01), Lavendel et al.
patent: 5309006 (1994-05-01), Willems et al.
patent: 5349207 (1994-09-01), Malhi
patent: 5502003 (1996-03-01), Ogino et al.
patent: 5629559 (1997-05-01), Miyahara
patent: 5801435 (1998-09-01), Otsuki
patent: 5877516 (1999-03-01), Mermagen et al.
patent: 5909354 (1999-06-01), Harada et al.
patent: 5949133 (1999-09-01), Wojnarowski
patent: 5965933 (1999-10-01), Young et al.
patent: 5981913 (1999-11-01), Kadomura et al.
patent: 6169330 (2001-01-01), Pankove
patent: 6271579 (2001-08-01), Going et al.
patent: 6319757 (2001-11-01), Parsons et al.
patent: 6765278 (2004-07-01), Parsons
Jablonski, J. and Bielawski, W., English abstract, “Assembly technology of the ‘CERATAB ’packaging of hybrid microcircuits,” Electronicka, No. 5, 1972, pp. 211-212.
Tong, Q.Y.; Gosele, U.; Yuan, C.; Steckl, A. J. and Reiche, M., “Silicon Carbide Wafer Bonding,” J. Electrochem. Soc. 142, No. 1, Jan. 1995, pp. 232-236.
Bhattacharya, P. K., Bonding of SiC slabs for electro-mechanical heat-sinks in advanced packaging applications, Int. J. Electronics vol. 73, No. 1, pp. 71-82, 1992.
Kamijoh, T.; Takano, H. and Sakuta, M., Heat treatment of semi-insulating InP:FE with phosphosilicate glass encapsulation, Jour. Appl. Phys., vol. 55, 1984, pp. 3756-3759.
Wong, C.P. and McBride, R., “Robust Titanate-Modified Encapsulants for High Voltage Potting Application of Multichip Module/Hybrid IC,” IEEE Transactions on Components, Hybrids and Manufacturing Technology vol. 16, No. 8, Dec. 1993, pp. 868-875.
Hunadi, R. and Bilow, N., “Low Expansion Blob Top Encapsulants—A New Generation of Materials for Chip-on-Board and Hybrid Packaging,” Proceedings of International SAMPE Symposium and Exhibition: 1st International SAMPE Electronic Conference-Electronic Materials and Processes, Santa Clara, CA, Jun. 23-25, 1987, pp. 397.
Wong, C. P., “Recent advances in hermetic equivalent flip-chip hybrid IC packaging of microelectronics,” Materials Chemistry and Physics 42, 1995, pp. 25-30.
Tudanca, M., Luna, R.G., Fraile, A., Triana, J., Gonzalez, J.M., Vincueria, I. and Dominguez, C., “A Low-Cost Manufacturing Process for High-Density Hybrid Components, Based on Multilayer Polyimide/Ceramic Structures,” Proceedings of 42nd Electronic Components and Technology Conference, San Diego, CA, 1992, pp. 120-128.
Savrun, E. and Toy, C., “An Aluminum Nitride Package for 600° C and Beyond,” Proc. IEEE, 1998, 0-7803-4540-Jan. 1998, pp. 265-268.
Kwak B. Leo
Parsons James D.
Advanced Power Technology Inc.
Lee Calvin
Marger & Johnson & McCollom, P.C.
Nelms David
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