Adhering layers to metals with dielectric adhesive layers

Details Adhering layers to metals with dielectric adhesive layers Adhering layers to metals with dielectric adhesive layers

2006-01-24

2006-01-24

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S577000, C257S641000

Reexamination Certificate

active

06989579

ABSTRACT:
The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II–VI and III–V semiconductors.

REFERENCES:
patent: 4097889 (1978-06-01), Kern et al.
patent: 4363868 (1982-12-01), Takasaki et al.
patent: 4439270 (1984-03-01), Powell et al.
patent: 5972722 (1999-10-01), Visokay et al.
patent: 6080655 (2000-06-01), Givens et al.
patent: 6248655 (2001-06-01), Machida et al.
patent: 6271593 (2001-08-01), Givens et al.
patent: 6429518 (2002-08-01), Endo
patent: 6451181 (2002-09-01), Denning et al.
patent: 6711308 (2004-03-01), Erben et al.
patent: 6717269 (2004-04-01), Shroff et al.

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